DESCRIPTION:
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATION:
Linear amplification and switching.
SPECIFICATION:
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 30V
Power Dissipation Pd: 500mW
DC Collector Curre..
DESCRIPTION:
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor application..
DESCRIPTION:
Drain-Source Volt (Vds): 60V
Drain-Gate Volt (Vdg): 60V
Gate-Source Volt (Vgs): ±20V
Drain Current (Id): 0.2A
Power Dissipation (Ptot): 350mW
Type: N-Channel
..
DESCRIPTION:
Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio amplifiers.
High Fidelity Audio Frequency Amplifier Output
Low Harmonic Distortion
High Safe Operation A
..
DESCRIPTION:
Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio amplifiers.
SPECIFICATION:
High Fidelity Audio Frequency Amplifier Output
Low Harmonic Distortion
High Safe Operation Area − 1.0 A/100 V @..
DESCRIPTION:
Maximum collector power dissipation (Pc): 300mW
Maximum collector-base voltage (Ucb): 50V
Maximum collector-emitter voltage (Uce): 45V
Maximum emitter-base voltage (Ueb): 5V
Maximum collector current (Ic max): 100mA
Maximum junction temperature (Tj): 125°C
Transition f..