TRANSISTORS

DESCRIPTION:High current (max. 800 mA) Low voltage (max. 40 V).APPLICATION:Linear amplification and switching.SPECIFICATION: Transistor Polarity: NPN  Collector Emitter Voltage V(br)ceo: 30V  Power Dissipation Pd: 500mW  DC Collector Curre..

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DESCRIPTION:Low current (max. 200 mA) Low voltage (max. 15 V)APPLICATION:High-speed switching VHF amplification.  ..

DESCRIPTION:Collector-Emitter Volt (Vceo): 60V Collector-Base Volt (Vcbo): 100V Collector Current (Ic): 15.0A hfe: 25-70 @ 4000mA Power Dissipation (Ptot): 115W Current-Gain-Bandwidth (ftotal): 2.5MHz Type: NPN..

DESCRIPTION:Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 60V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 300MHz Type: NPN..

DESCRIPTION:Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 40V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 250MHz Type: NPN  ..

DESCRIPTION:Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor application..

DESCRIPTION:Drain-Source Volt (Vds): 60V Drain-Gate Volt (Vdg): 60V Gate-Source Volt (Vgs): ±20V Drain Current (Id): 0.2A Power Dissipation (Ptot): 350mW Type: N-Channel  ..

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DESCRIPTION:Maximum collector power dissipation (Pc): 300mW Maximum collector-base voltage (Ucb): 50V Maximum collector-emitter voltage (Uce): 45V Maximum emitter-base voltage (Ueb): 5V Maximum collector current (Ic max): 100mA Maximum junction temperature (Tj): 125°C Transition f..

DESCRIPTION:BC547 is a NPN general-purpose Bipolar NPN transistors in TO-92 package, designed for use in driver stage of audio amplifier. ..

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DESCRIPTION:Silicon TypeType Mat Case Diss Vcb Ic Hfe Hfe @25C Bias BC549 NPN TO-92 300mW 30V 100mA 110 2mA    ..

DESCRIPTION:The BC557 is general purpose silicon, PNP, bipolar junction transistor.  ..

DESCRIPTION: Low current (max. 200 mA) Low voltage (max. 15 V)APPLICATIONS:High-speed switching VHF amplification.  ..

DESCRIPTION:Collector-Emitter Volt (Vceo): 60V Collector Current (Ic): 1.0A hfe: 40 @ 160mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 200MHz Type: NPN..

DESCRIPTION:Collector-Emitter Volt (Vceo): 60V Collector Current (Ic): 1.0A hfe: 40 @ 160mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 200MHz Type: NPN..

DESCRIPTION:Collector-Emitter Volt (Vceo): 80V Collector Current (Ic): 0.5A hfe: 40 @ 160mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 200MHz Type: NPN..

DESCRIPTION:Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits ..

BD140  PNP Si Transistor1.5 A, 80 V PNP Bipolar Power Transistor​ ..

DESCRIPTION:Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits ..

DESCRIPTION:Collector-Emitter Volt (Vceo): 20V Collector-Base Volt (Vcbo): 30V Collector Current (Ic): 0.03A hfe: 67-220 @ 1mA Power Dissipation (Ptot): 300mW Current-Gain-Bandwidth (ftotal): 120MHz Type: NPN..

DESCRIPTION:Low On-Resistance: 6

Secondary Breakdown Free: 220 V Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature High-Voltage..