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2N3904 NPN General Purpose Transistor
- Stock: In Stock
- Model: BE-000755
- Weight: 10.00g
Rs3.00
Ex Tax: Rs2.54
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2N3904 NPN General Purpose Transistor
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DESCRIPTION:Low current (max. 200 mA)
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DESCRIPTION:Collector-Emitter Volt (Vceo): 60V
Collector-Base Volt (Vcbo): 100V
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hfe: 25-70 @ 4000mA
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DESCRIPTION:Collector-Emitter Volt (Vceo): 40V
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DESCRIPTION:Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor ..
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DESCRIPTION:Drain-Source Volt (Vds): 60V
Drain-Gate Volt (Vdg): 60V
Gate-Source Volt (Vgs): ±20V
Drain Current (Id): 0.2A
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DESCRIPTION:Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio a..
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DESCRIPTION:Maximum collector power dissipation (Pc): 300mW
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DESCRIPTION:Silicon TypeType Mat Case Diss Vcb Ic Hfe Hfe @25C Bias
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DESCRIPTION: Low current (max. 200 mA)
Low voltage (max. 15 V)APPLICATIONS:High-speed switching
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DESCRIPTION:Collector-Emitter Volt (Vceo): 60V
Collector Current (Ic): 1.0A
hfe: 40 @ 160mA
Power Dissipation (Ptot): 625mW
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DESCRIPTION:Collector-Emitter Volt (Vceo): 60V
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DESCRIPTION:Collector-Emitter Volt (Vceo): 80V
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DESCRIPTION:Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits..
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