FEATURES:Current transfer ratio
(CTR: MIN. 50% at I=5mA, Vce=5V)
High isolation voltage between input and outputAPPLICATIONS:Computer terminals
System appliances, measuing instruments
Registers, copiers, automatic Vending machines
Electric home appliances, s..
Specifications:Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Phototransistor
High Direct-Current Transfer Ratio
Base Lead Provided for Conventional Transistor Biasing
High-Voltage Electrical Isolation . . . 1.5-kV, or 3.55-kV Rating
Plastic Dual-In-Line Pac..
The MOC3021Series consists of gallium arsenide infrared emitting diodes, optically coupled to a silicon bilateral switch. To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. They are designed for app..
The MOC3041, MOC3042 and MOC3043 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to equi..
The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the functions of Zero Voltage Crossing bilateral triac drivers. They are designed for use with a triac in the interface of logic systems to equip..