Model: BE-000762
DESCRIPTION:High current (max. 800 mA)
Low voltage (max. 40 V).APPLICATION:Linear amplification and switching.SPECIFICATION: Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 30V
Power Dissipation Pd: 500mW
DC Collector Curre..
Rs10.00
Hot
Model: BE-000756
..
Rs2.00
Model: BE-000771
DESCRIPTION:Low current (max. 200 mA)
Low voltage (max. 15 V)APPLICATION:High-speed switching
VHF amplification.
..
Rs16.00
Model: BE-000783
DESCRIPTION:Collector-Emitter Volt (Vceo): 60V
Collector-Base Volt (Vcbo): 100V
Collector Current (Ic): 15.0A
hfe: 25-70 @ 4000mA
Power Dissipation (Ptot): 115W
Current-Gain-Bandwidth (ftotal): 2.5MHz
Type: NPN..
Rs55.00
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Model: BE-000755
DESCRIPTION:Collector-Emitter Volt (Vceo): 40V
Collector-Base Volt (Vcbo): 60V
Collector Current (Ic): 0.2A
hfe: 100-300 @ 10mA
Power Dissipation (Ptot): 625mW
Current-Gain-Bandwidth (ftotal): 300MHz
Type: NPN..
Rs2.00
Hot
Out Of Stock
Model: BE-000754
DESCRIPTION:Collector-Emitter Volt (Vceo): 40V
Collector-Base Volt (Vcbo): 40V
Collector Current (Ic): 0.2A
hfe: 100-300 @ 10mA
Power Dissipation (Ptot): 625mW
Current-Gain-Bandwidth (ftotal): 250MHz
Type: NPN
..
Rs1.50
Model: BE-000770
DESCRIPTION:Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor application..
Rs27.00
Out Of Stock
Model: BE-000765
DESCRIPTION:Drain-Source Volt (Vds): 60V
Drain-Gate Volt (Vdg): 60V
Gate-Source Volt (Vgs): ±20V
Drain Current (Id): 0.2A
Power Dissipation (Ptot): 350mW
Type: N-Channel
..
Rs5.00
Out Of Stock
Model: BE-000792
DESCRIPTION:Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio amplifiers.High Fidelity Audio Frequency Amplifier Output
Low Harmonic Distortion
High Safe Operation A..
Rs156.00
Out Of Stock
Model: BE-000791
DESCRIPTION:Designed for general purpose power amplifier and switching applications. This is an original Toshiba transistor for high power audio amplifiers.SPECIFICATION:High Fidelity Audio Frequency Amplifier Output
Low Harmonic Distortion
High Safe Operation Area − 1.0 A/100 V @..
Rs77.00
Model: BE-000753
DESCRIPTION:Maximum collector power dissipation (Pc): 300mW
Maximum collector-base voltage (Ucb): 50V
Maximum collector-emitter voltage (Uce): 45V
Maximum emitter-base voltage (Ueb): 5V
Maximum collector current (Ic max): 100mA
Maximum junction temperature (Tj): 125°C
Transition f..
Rs1.00
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Out Of Stock
Model: BE-000407
DESCRIPTION:BC547 is a NPN general-purpose Bipolar NPN transistors in TO-92 package, designed for use in driver stage of audio amplifier.
..
Rs1.00
Model: BE-000752
DESCRIPTION:Silicon TypeType Mat Case Diss Vcb Ic Hfe Hfe @25C Bias
BC549 NPN TO-92 300mW 30V 100mA 110 2mA
..
Rs16.00
Hot
Model: BE-000751
DESCRIPTION:The BC557 is general purpose silicon, PNP, bipolar junction transistor.
..
Rs1.00
Hot
Model: BE-000750
DESCRIPTION: Low current (max. 200 mA)
Low voltage (max. 15 V)APPLICATIONS:High-speed switching
VHF amplification.
..
Rs1.00
Model: BE-000764
DESCRIPTION:Collector-Emitter Volt (Vceo): 60V
Collector Current (Ic): 1.0A
hfe: 40 @ 160mA
Power Dissipation (Ptot): 625mW
Current-Gain-Bandwidth (ftotal): 200MHz
Type: NPN..
Rs6.00
Model: BE-000763
DESCRIPTION:Collector-Emitter Volt (Vceo): 60V
Collector Current (Ic): 1.0A
hfe: 40 @ 160mA
Power Dissipation (Ptot): 625mW
Current-Gain-Bandwidth (ftotal): 200MHz
Type: NPN..
Rs6.00
Model: BE-000761
DESCRIPTION:Collector-Emitter Volt (Vceo): 80V
Collector Current (Ic): 0.5A
hfe: 40 @ 160mA
Power Dissipation (Ptot): 625mW
Current-Gain-Bandwidth (ftotal): 200MHz
Type: NPN..
Rs6.00
Model: BE-000760
DESCRIPTION:Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits
..
Rs6.00
Model: BE-000494
BD140 PNP Si Transistor1.5 A, 80 V PNP Bipolar Power Transistor
..
Rs5.00
Model: BE-000759
DESCRIPTION:Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits
..
Rs6.00
Model: BE-000757
DESCRIPTION:Collector-Emitter Volt (Vceo): 20V
Collector-Base Volt (Vcbo): 30V
Collector Current (Ic): 0.03A
hfe: 67-220 @ 1mA
Power Dissipation (Ptot): 300mW
Current-Gain-Bandwidth (ftotal): 120MHz
Type: NPN..
Rs4.00
Model: BE-000781
DESCRIPTION:Low On-Resistance: 6
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
High-Voltage..
Rs29.00