Menu
Your Cart

BC636 636 Trasistor

DESCRIPTION:

  • Collector-Emitter Volt (Vceo): 60V
  • Collector Current (Ic): 1.0A
  • hfe: 40 @ 160mA
  • Power Dissipation (Ptot): 625mW
  • Current-Gain-Bandwidth (ftotal): 200MHz
  • Type: NPN

Write a review

Please login or register to review
We are Upgrading...
Sorry, We are currently closed and will reopen on the 21st of July. We apologize for any inconvenience this may cause.