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BC636 636 Trasistor

DESCRIPTION:

  • Collector-Emitter Volt (Vceo): 60V
  • Collector Current (Ic): 1.0A
  • hfe: 40 @ 160mA
  • Power Dissipation (Ptot): 625mW
  • Current-Gain-Bandwidth (ftotal): 200MHz
  • Type: NPN

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