Specifications:

• Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Phototransistor
• High Direct-Current Transfer Ratio
• Base Lead Provided for Conventional Transistor Biasing
• High-Voltage Electrical Isolation . . . 1.5-kV, or 3.55-kV Rating
• Plastic Dual-In-Line Package
• High-Speed Switching: tr = 5 µs, tf = 5 µs Typical
• Designed to be Interchangeable with General Instruments MCT2 and MCT2E